PE2606 Datasheet, semi one

*N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
*P-Channel VDS = -20V,ID = -7A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=.

GENERAL FEATURES
*N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
*P-Channel .

The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES
*N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ .